Selective chemical vapor deposition of smooth aluminum films from highly supersaturated source gas

Journal of the Electrochemical Society

Volumn 146, Issue 11, 1999, Pages 4111-4117

  Amazawa, Takao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; COALESCENCE; METALLIC FILMS; MORPHOLOGY; NUCLEATION; SILICON; SUPERSATURATION;

DOUBLE WALL CHEMICAL VAPOR DEPOSITION SYSTEM;

CHEMICAL VAPOR DEPOSITION;

EID: 0033321998     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392600     Document Type: Article

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