High-Throughput low temperature tungsten deposition process for 0.25 μm technology

1999 IEEE International Symposium on Semiconductor Manufacturing, ISSM 1999 - Conference Proceedings

Volumn , Issue , 1999, Pages 427-428

  Elst, W ^a   Van Zomeren, A ^a   Berenbaum, D ^b   Roede, H ^a   Schmitz, J ^a   Ellwanger, R ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DEPOSITION; MANUFACTURE; SEMICONDUCTOR DEVICE MANUFACTURE; THROUGHPUT; TUNGSTEN; ELECTRIC VARIABLES MEASUREMENT; LOW TEMPERATURE OPERATIONS;

ELECTRICAL MEASUREMENT; ELECTRICAL PERFORMANCE; HIGH PRESSURE; HIGH THROUGHPUT; LOW TEMPERATURES; PROCESS CAPABILITIES; STEP COVERAGE; TUNGSTEN DEPOSITION;

TEMPERATURE; SEMICONDUCTOR DEVICE MANUFACTURE;

TUNGSTEN DEPOSITION PROCESSES;

EID: 0033321853     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSM.1999.808827     Document Type: Conference Paper

References (4)

1. H. van Krancnburg, P. H. Wocrlcc, J. Elecrrocheni. , Soc. , Vol. 145, pp 1285-291, 1998
2. H. Tada, N. Matsukawii, Y. Shimizu, M. Kanczawa, M Shibaraki, 'I. Saruwalari, " Mechmixnl of Aluminicni Whisker and Bulge (. 'ormation at Vias in Narrow Meral Lines", Poster presentation VIMEC 1998
3. E. J. McIncrncy, P. Gcraghty and S. Kang, Tungstcn WorkshopV, 13. 5 (1990)
4. J. E. J. Schmitz, A. J. M. van Dijk, J. L. G. Suijkcr, M. J. Buijting, R. C. Ellwanger, Appl. Surface Science, 38, 350, (1989)