Structural and electronic properties of doped InP/InGaAs short period superlattices grown by LP-MOVPE

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 835-838

  Henriques, A B ^a   Hanamoto, L K ^a   Oliveira, R F ^a   Souza, P L ^b   Goncalves L C D ^b   Yavich, B ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PROBABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SHUBNIKOV-DE HAAS EFFECT; X RAY SPECTROSCOPY;

LATTICE-MATCHED SUPERLATTICES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0033320471     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00516-5     Document Type: Article

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