The role of the lattice step in epitaxial growth

Materials Research Society Symposium - Proceedings

Volumn 570, Issue , 1999, Pages 33-38

  Fu, Tsu Yi ^a   Tsong, Tien T ^a  

^a INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DIFFUSION IN SOLIDS; ELECTRODYNAMICS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HOLE TRAPS; ION MICROSCOPES; MORPHOLOGY; POTENTIAL ENERGY; TEMPERATURE; THIN FILMS;

FIELD ION MICROSCOPE; HOMOEPITAXIAL GROWTH; LATTICE STEP; POTENTIAL ENERGY DIAGRAM; REFLECTIVE PROPERTIES; TRAPPING PROPERTIES;

CRYSTAL LATTICES;

EID: 0033320458     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-570-33     Document Type: Article

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