Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6846-6850

  Akagi, Yoshihiro ^a   Hanamoto, Katsumi ^a   Suzuki, Hiroyuki ^a   Katoh, Takanori ^b   Sasaki, Muneo ^c   Imai, Shigeru ^a   Tsudagawa, Masaru ^a   Nakayama, Yasuyuki ^a   Miki, Hidejiro ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b SUMITOMO HEAVY INDUSTRIES LTD   (Japan)

^c INDUSTRIAL RESEARCH CENTER OF SHIGA PREFECTURE   (Japan)

Author keywords

Ablation; Indium tin oxide; ITO; Photo excited process; Synchrotron radiation; Transparent conductive film

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; FILM PREPARATION; LASER ABLATION; PROBES; SCANNING ELECTRON MICROSCOPY; SYNCHROTRON RADIATION; TRANSPARENCY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON PROBE MICROANALYSIS; INDIUM TIN OXIDE FILMS; PHOTOEXCITED PROCESS; ROOM TEMPERATURE; TRANSPARENT CONDUCTIVE FILM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033320058     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6846     Document Type: Article

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