Photoelectric and kinetic properties of PbTe(Ga) films

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3890, Issue , 1999, Pages 212-216

  Akimov, Boris A ^a   Bogoyavlenskiy, Vladislav A ^a   Ryabova, Ludmila I ^a   Vasil'kov, Vyacheslav N ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CHARGE CARRIERS; ENERGY GAP; FERMI LEVEL; FILM PREPARATION; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; SEMICONDUCTING GALLIUM; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

HOT WALL EPITAXY; MIXED VALENCE IMPURITIES; PHOTOSENSITIVE FILM;

SEMICONDUCTING FILMS;

EID: 0033320036     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)