Reaction of a Si (100) surface with a hot C2H4 beam

Surface Science

Volumn 433-435, Issue , 1999, Pages 167-171

  Kusunoki, I ^a   Igari, Y ^a   Ishidzuka, S ^a   Mine, T ^a   Takami, T ^a   Takaoka, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Carbonization; Molecular beam; Molecule solid reactions; Silicon; Silicon carbide; X ray photoelectron spectroscopy

Indexed keywords

CARBON INORGANIC COMPOUNDS; CARBONIZATION; MOLECULAR BEAMS; MOLECULES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON CARBIDE; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

DISSOCIATION RATE; GRAPHITIC FILM; MOLECULE SOLID REACTIONS;

SURFACE PHENOMENA;

EID: 0033318118     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00057-6     Document Type: Article

References (4)

1. I. Kusunoki, T. Takagaki, S. Ishidzuka, Y. Igari, T. Takaoka, Surf. Sci. 380 (1997) 131.
2. T. Takaoka, T. Takagaki, I. Kusunoki, Surf. Sci. 347 (1996) 105.
3. T. Takaoka, H. Saito, Y. Igari, I. Kusunoki, J. Crystal Growth 183 (1998) 175.
4. J.F. Moulder, W.F. Stickle, P.E. Sobol, K.D. Bomben, in: J. Chastain (Ed.), Handbook of X-ray Photoelectron Spectroscopy, Perkin Elmer, Minnesota, 1992.