Studies of Ir-Ta-O as high temperature stable electrode material and its application for ferroelectric SrBi2Ta2O9 thin film deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 A, 1999, Pages

  Zhang, Fengyan ^a   Maa, Jer Shen ^a   Hsu, Sheng Teng ^a   Ohnishi, Shigeo ^b   Zhen, Wendong ^b  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODEPOSITION; ELECTRODES; FERROELECTRIC MATERIALS; IRIDIUM COMPOUNDS; SILICON; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS; TANTALUM; THERMODYNAMIC STABILITY;

HIGH TEMPERATURE ELECTRODES; STRONTIUM BISMUTH TANTALATE;

DIELECTRIC FILMS;

EID: 0033317284     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/jjap.38.l1447     Document Type: Article

References (25)