Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 A, 1999, Pages

  Jeng, Ming Jer ^a   Wang, Hung Thung ^b   Chang, Liann Be ^b   Cheng, Yi Chang ^b   Lee, Cheng Min ^b   Lin, Ray Ming ^c  

^a ST JOHN'S UNIVERSITY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CURRENT DENSITY; ENERGY GAP; LEAKAGE CURRENTS; NICKEL; PRASEODYMIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR METAL BOUNDARIES;

SCHOTTKY BARRIER HEIGHT; SCHOTTKY CONTACTS;

ELECTRIC CONTACTS;

EID: 0033316999     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/jjap.38.l1382     Document Type: Article

References (10)