Improved hold-off characteristics of gallium arsenide photoconductive switches used in high power applications

Digest of Technical Papers-IEEE International Pulsed Power Conference

Volumn 1, Issue , 1999, Pages 316-319

  Islam, N E ^a   Schamiloglu, E ^a   Fleddermann, C B ^a   Schoenberg, J S H ^a   Joshi, R P ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CHARGE CARRIERS; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTROSTATICS; PHOTOCONDUCTING DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

HOLD-OFF VOLTAGE; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES (PCSS);

SEMICONDUCTOR SWITCHES;

EID: 0033316534     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)