Photo-induced variation of dielectric constant of silicon in the far infrared: applications to light-controllable photonic band-gap crystals in the terahertz frequency range

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3795, Issue , 1999, Pages 457-467

  Coutaz, J L ^a   Duvillaret, L ^a   Garet, F ^a   Chenolkov, A ^a   Rowson, S ^a   Lourtioz, J M ^a  

^a UNIVERSITÉ DE SAVOIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDPASS FILTERS; CRYSTAL LATTICES; ENERGY GAP; LASER BEAMS; PERMITTIVITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON WAFERS; SPECTROSCOPY; TIME DOMAIN ANALYSIS;

DRUDE MODELS; LASER EXCITATION; PHOTONIC BAND GAP CRYSTALS; TERAHERTZ FREQUENCY RANGE; TIME DOMAIN SPECTROSCOPY;

ULTRAFAST PHENOMENA;

EID: 0033316485     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.370194     Document Type: Conference Paper

References (15)