Analysis on voltage unbalance between the inner and outer devices in three level IGBT converters

Proceedings of the International Conference on Power Electronics and Drive Systems

Volumn 1, Issue , 1999, Pages 218-224

  Zheng yi, Zhao ^a   Chang jiang, Zhan ^a   Yu, Han ^a   Ting, Xie ^a   Liang bing, Zhao ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTOR DIODES;

INSULATED GATE BIPOLAR TRANSISTORS; NEUTRAL POINT CLAMPING; PARASITIC INDUCTANCE; SNUBBER CIRCUIT; VOLTAGE UNBALANCE;

POWER CONVERTERS;

EID: 0033315403     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)