Actively biased p-channel MOSFET studied with scanning capacitance microscopy

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 835-838

  Nakakura, C Y ^a   Hetherington, D L ^a   Shaneyfelt, M R ^a   Dodd, P E ^a   De Wolf, P ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; INTEGRATED CIRCUIT LAYOUT; MICROSCOPIC EXAMINATION;

CROSS SECTION; DUAL IN LINE PACKAGE; SCANNING CAPACITANCE MICROSCOPY;

MOSFET DEVICES;

EID: 0033315081     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)