Deep state defects in strained and relaxed epitaxial Si1 - XGex on Si introduced by 3d transition metal and 5d noble metal impurities

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 603-607

  Nauka, K ^a   Kamins, T I ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Band offsets; Deep state defects; Epitaxial Si1 XGex Si; Noble metal impurities; Transition metal impurities

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; PRECIOUS METALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; TRANSITION METALS;

DEEP STATE DEFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033314723     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00584-0     Document Type: Article

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