Fabrication and properties of high-Tc ramp junctions with manganite barriers

Physica C: Superconductivity and its Applications

Volumn 326, Issue , 1999, Pages 79-82

  Huang, M Q ^a   Ivanov, Z G ^a   Komissinski, P V ^a   Claeson, T ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; JOSEPHSON JUNCTION DEVICES; LANTHANUM COMPOUNDS; LASER ABLATION; MANGANESE COMPOUNDS; MULTILAYERS; OXIDE SUPERCONDUCTORS; PULSED LASER APPLICATIONS; SUBSTRATES; YTTRIUM BARIUM COPPER OXIDES;

MANGANITE; NORMAL STATE RESISTANCE; RAMP JUNCTIONS;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0033314699     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4534(99)00418-9     Document Type: Article

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