Epitaxial growth of atomically flat spin dependent tunneling junctions

Materials Research Society Symposium - Proceedings

Volumn 570, Issue , 1999, Pages 73-78

  Li, Y ^a   Wang, S X ^a   Mancoff, F B ^a   Clemens, B M ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; IRON COMPOUNDS; MORPHOLOGY; NICKEL COMPOUNDS; PLATINUM; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SUBSTRATES; SURFACES; TEMPERATURE; X RAY DIFFRACTION;

ATOMICALLY FLAT INTERFACES; BARRIER LAYERS; MAGNETIC HYSTERESIS LOOP MEASUREMENT; SPIN DEPENDENT TUNNELING JUNCTIONS; UHV SPUTTERING CHAMBER;

TUNNEL JUNCTIONS;

EID: 0033313778     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-570-73     Document Type: Article

References (7)

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