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Volumn E82-C, Issue 6, 1999, Pages 967-975
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Modeling and characterization of ultra deep submicron CMOS devices
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
GATES (TRANSISTOR);
INTEGRATED CIRCUIT LAYOUT;
MOSFET DEVICES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MODELS;
THRESHOLD VOLTAGE;
VELOCITY;
MOS CIRCUIT MODEL;
ULTRA DEEP SUBMICRON CMOS DEVICES;
CMOS INTEGRATED CIRCUITS;
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EID: 0033313430
PISSN: 09168524
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (4)
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References (31)
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