In-situ ion implantation of Xe into Al with high-resolution high-voltage electron microscopy

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 811-814

  Furuya, Kazuo ^a   Mitsuishi, Kazutaka ^a   Song, Minghui ^a   Saito, Tetsuya ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRON BEAMS; ELECTRON IRRADIATION; HIGH RESOLUTION ELECTRON MICROSCOPY; ION BEAMS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY; XENON;

HIGH-VOLTAGE TRANSMISSION ELECTRON MICROSCOPY (HVEM);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033311956     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)