A GaAs micro solar cell with output voltage over 20V

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6947-6951

  Ohsawa, Jun ^a   Kawasaki, Masanori ^a   Tanaka, Tatsuhiko ^a   Tsuchida, Nuio ^a   Hayakawa, Soichiro ^a   Yoshida, Mitsuru ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

GaAs; Micromachine; Photocurrent; Semi insulating; Shunt resistance; Solar cell

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SUBSTRATES;

MICRO SOLAR CELLS; SEMI INSULATING SUBSTRATE; SERIES RESISTANCE; SHUNT RESISTANCE;

SOLAR CELLS;

EID: 0033311102     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6947     Document Type: Article

References (4)

1. J. B. Lee, Z. Chen, M. G. Allen, A. Rohatgi and R. Arya: J. Microclectromech. Syst. 4 (1995) 102.
2. K. Oyama, M. Inouc and M. Kimura: Tech. Dig. 16th Sensor Symp. 1998, p. 95.
3. M. B. Prince: J. Appl. Phys. 26 (1955) 534.
4. S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981) 2nd ed., p. 806.