Single-crystalline CoSi2 layer formation by focused ion beam synthesis

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7148-7150

  Hausmann, Stephan ^a   Bischoff, Lothar ^a   Teichert, Jochen ^a   Voelskow, Matthias ^a   Möller, Wolfhard ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Cobalt disilicide; Damage accumulation; Dwell time; Focused ion beam; Ion beam synthesis; Ion implantation; Radiation damage

Indexed keywords

COBALT COMPOUNDS; CURRENT DENSITY; FOCUSING; ION BEAM LITHOGRAPHY; ION IMPLANTATION; RADIATION DAMAGE; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

FOCUSED ION BEAM SYNTHESIS;

NANOTECHNOLOGY;

EID: 0033311025     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7148     Document Type: Article

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