Characteristic variation of exposure pattern in cell-projection electron-beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7031-7034

  Kotera, Masatoshi ^a   Yamaguchi, Kiyoshi ^a   Okagawa, Takashi ^b   Matsuoka, Koji ^b   Kojima, Yoshinori ^b   Yamabe, Masaki ^b  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Cell projection lithography; Contrast of exposure pattern; Coulomb interaction effect; FWHM of exposed line; Optimum refocus length

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON BEAM LITHOGRAPHY; FOCUSING; OPTIMIZATION; PHOTOLITHOGRAPHY; PROBABILITY;

CELL PROJECTION LITHOGRAPHY SYSTEMS; ELECTRON BEAM LITHOGRAPHY;

NANOTECHNOLOGY;

EID: 0033311021     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7031     Document Type: Article

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