Influence of a shallow p+ offset region on a novel edge termination technique using lightly doped p-rings

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1999, Pages 63-66

  Bose, Subhas chandra J V ^a   De Souza, M M ^a   Narayanan, E M Sankara ^a   Spulber, O ^a   Sweet, M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING;

EDGE TERMINATION METHODS; LIGHTLY DOPED P-RINGS;

HETEROJUNCTIONS;

EID: 0033310773     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)