Enhanced dielectric properties in SrTiO3/BaTiO3 strained superlattice structures prepared by atomic-layer metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6817-6820

  Wang, Zaiyang ^a   Yasuda, Tomohiko ^a   Hatatani, Shigeo ^a   Oda, Shunri ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AFM; BaTiO3; Dielectric constant; MOCVD; SrTiO3; Superlattice; TEM; XRD

Indexed keywords

BARIUM COMPOUNDS; EPITAXIAL GROWTH; FERROELECTRICITY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; STRONTIUM COMPOUNDS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER METALLORGANIC CHEMICAL VAPOR DEPOSITION; HETEROEPITAXIAL GROWTH; REACTION CHAMBER;

SUPERLATTICES;

EID: 0033308594     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6817     Document Type: Article

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