Structural characterization of epitaxial Cu2Mo6S8 thin films grown on R-cut sapphire by pulsed laser deposition

Thin Solid Films

Volumn 353, Issue 1, 1999, Pages 62-66

  Lemee N ^a   Guilloux Viry, M ^a   Perrin, A ^a   Kugler, M ^b   Fischer, O ^b   Li, Z Z ^c   Raffy, H ^c  

^a Laboratoire de Chimie du Solide et Inorganique Moleculaire de Rennes   (France)

^b UNIVERSITY OF GENEVA   (Switzerland)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; DEPOSITION; EPITAXIAL GROWTH; LASER ABLATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACE STRUCTURE; TUNNEL JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

COPPER MOLYBDENUM SULFIDES; FIELD EMISSION HIGH RESOLUTION SCANNING ELECTRON MICROSCOPY; PULSED LASER DEPOSITION;

THIN FILMS;

EID: 0033308319     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00393-4     Document Type: Article

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