Enhancement of negative-ion-assisted silicon oxidation by radio-frequency bias

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 A, 1999, Pages

  Fujii, Takashi ^a   Aoyagi, Hitoshi ^a   Kusaba, Kouta ^a   Horiike, Yasuhiro ^b   Shindo, Haruo ^a  

^a TOKAI UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; OXIDATION; PLASMA APPLICATIONS; RADIATION DAMAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

ION ASSISTED SILICON OXIDATION;

SEMICONDUCTING SILICON;

EID: 0033307940     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/jjap.38.l1466     Document Type: Article

References (3)