Reproducible high field effect mobility polysilicon thin film transistors involving pulsed Nd:YVO4 laser crystallization

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 297-300

  Helen, Y ^a   Dassow, R ^a   Mourgues, K ^a   Bonnaud, O ^a   Mohammed Brahim, T ^a   Raoult, F ^a   Koehler, J R ^a   Werner, J H ^a   Lemoine, D ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PULSED LASER CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0033306995     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)