Electronic transitions in mixed phase crystalline/amorphous silicon in the low crystalline fraction regime

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 495-500

  David Cohen, J ^a   Kwon, Daewon ^a   Chen, Chih Chiang ^a   Hyun Chul, J I N ^a   Hollar, Eric ^a   Robertson, Ian ^a   Abelson, John R ^a  

^a UNIVERSITY OF OREGON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; CARRIER MOBILITY; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRON TRAPS; ENERGY GAP; FILM PREPARATION; MAGNETRON SPUTTERING; PHASE TRANSITIONS; PHOTOCURRENTS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONIC TRANSITIONS; LOW CRYSTALLINE FRACTION REGIME; MICROCRYSTALLINITY; MIXED PHASE; PHOTOCAPACITANCE;

THIN FILMS;

EID: 0033300110     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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