Electrochemical synthesis of CuInSe2 for thin film devices

Materials Science in Semiconductor Processing

Volumn 2, Issue 4, 1999, Pages 289-296

  Raffaelle, R P ^a   Potdevin, T ^a   Hepp, A F ^b   Bailey, S G ^b  

^a FLORIDA INSTITUTE OF TECHNOLOGY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DEPOSITION; ELECTROCHEMISTRY; STOICHIOMETRY; THIN FILM DEVICES;

COPPER INDIUM DISELENIDE;

SCHOTTKY BARRIER DIODES;

EID: 0033298685     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00025-6     Document Type: Article

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