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Volumn 557, Issue , 1999, Pages 305-310
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Hydrogen transport in phosphorus and boron doped polycrystalline silicon
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
BORON;
DEUTERIUM;
DIFFUSION;
ELECTRON TRANSPORT PROPERTIES;
FERMI LEVEL;
HYDROGENATION;
MATHEMATICAL MODELS;
PHOSPHORUS;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTOR DOPING;
SUBSTRATES;
HYDROGEN DIFFUSION;
POLYCRYSTALLINE SILICON;
SILICON;
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EID: 0033298624
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-557-305 Document Type: Article |
Times cited : (3)
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References (10)
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