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Volumn 557, Issue , 1999, Pages 305-310

Hydrogen transport in phosphorus and boron doped polycrystalline silicon

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BORON; DEUTERIUM; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HYDROGENATION; MATHEMATICAL MODELS; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SUBSTRATES;

EID: 0033298624     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-305     Document Type: Article
Times cited : (3)

References (10)
  • 8
    • 33744683157 scopus 로고
    • eds. J. I. Pankove and N. M. Johnson Academic Press, San Diego, Chap. 10
    • C. Herring and N. M. Johnson, in Hydrogen in Semiconductors, eds. J. I. Pankove and N. M. Johnson (Academic Press, San Diego, 1991) vol. 34, Chap. 10.
    • (1991) Hydrogen in Semiconductors , vol.34
    • Herring, C.1    Johnson, N.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.