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Volumn 557, Issue , 1999, Pages 463-468
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Capacitance spectroscopy of defects in a-SI:H/c-SI heterostructures
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE MEASUREMENT;
COMPUTER SIMULATION;
CURRENT VOLTAGE CHARACTERISTICS;
DEPOSITION;
DIODES;
HETEROJUNCTIONS;
CAPACITANCE SPECTROSCOPY;
FREQUENCY DEPENDENT CAPACITANCE MEASUREMENT;
TEMPERATURE DEPENDENT CAPACITANCE MEASUREMENT;
WAVER SURFACE TREATMENTS;
AMORPHOUS SILICON;
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EID: 0033297473
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-557-463 Document Type: Article |
Times cited : (2)
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References (9)
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