Very highly efficient surface acoustic wave convolver using GaSb/InSb/AlGaAsSb heterostructures grown on LiNbO3 substrates

Proceedings of the IEEE Ultrasonics Symposium

Volumn 1, Issue , 1999, Pages 277-280

  Kuze, N ^a   Goto, H ^a   Kanno, Y ^a   Tsunashima, M ^a   Yamagata, Y ^a   Yamanouchi, K ^a  

^a ASAHI CHEMICAL INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FILM GROWTH; HETEROJUNCTIONS; LITHIUM COMPOUNDS; LITHIUM NIOBATE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE;

ALUMINUM GALLIUM ARSENIC ANTIMONIDE; ELECTRODE STRUCTURE; GALLIUM ANTIMONIDE; INDIUM ANTIMONIDE; PSEUDO NOISE CODE SIGNAL; SURFACE ACOUSTIC WAVE CONVOLVER;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0033293582     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)