Characterization of deep level trap centres in 6H-SiC p-n junction diodes

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 66, Issue 1, 1999, Pages 106-110

  Ghaffour, K ^a   Lauer, V ^a   Souifi, A ^a   Guillot, G ^a   Raynaud, C ^b   Ortolland, S ^b   Iocatelli, M L ^b   Chante, J P ^b  

^a UNIVERSITÉ DE LYON   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; HOLE TRAPS; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

SEMICONDUCTOR JUNCTION DIODES;

SEMICONDUCTOR DIODES;

EID: 0033285226     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00116-6     Document Type: Article

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