Epitaxial CoSi2 layers fabricated by a single-step technique of high-current Co-ion implantation

Journal of Physics D: Applied Physics

Volumn 32, Issue 23, 1999, Pages

  Zhu, H N ^a   Liu, B X ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT SILICIDE; METAL VAPOR VACUUM ARC (MEVVA) ION SOURCES;

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; ION IMPLANTATION; ION SOURCES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

SEMICONDUCTING FILMS;

EID: 0033284605     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/23/101     Document Type: Article

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