Analysis of surface-state effects on gate-lag phenomena in recessed-gate and buried-gate GaAs MESFETs

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 1999, Pages 191-194

  Horio, K ^a   Wakabayashi, A ^a   Yamada, T ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED ANALYSIS; ELECTRIC CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

GATE-LAG;

MESFET DEVICES;

EID: 0033283914     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ipfa.1999.791332     Document Type: Conference Paper

References (11)