InGaP/GaAs based heterojunction bipolar transistor characterization using non-contact optical spectroscopy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 66, Issue 1, 1999, Pages 185-188

  Murtagh, M ^a   Beechinor, J T ^a   Cordero, N ^a   Kelly, P V ^a   Crean, G M ^a   Bland, S W ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Epitaxial Products International Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELDS; ELLIPSOMETRY; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

NON-CONTACT OPTICAL SPECTROSCOPY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033283666     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00088-4     Document Type: Article

References (8)

1. Kroemer H. J. Vac. Sci. Technol. B. 1:1983;126-130.
2. Murtagh M., Herbert P.A.F., Kelly P.V., Crean G.M. Mat. Res. Soc. Symp. Proc. 406:1996;327-332.
3. F.H. Pollak, W. Krystek, M. Leibovitch, H. Qiang, D.C. Streit, M. Wojtowicz, Am. Inst. Phys. (1996) 669-672.
4. E. Richter et al., Invited Paper, Symposium 5, EXMATEC '98 4th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 21-24 June, Cardiff, Wales, UK.
5. Gregor E., Gulden K.H., Moser M., Schmiedal G., Kiesel P., Dohler G.H. Appl. Phys. Lett. 70(11):1997;1459-1461.
6. Silvaco Data Systems, Santa Clara, CA.
7. Froyen S., Zunger A., Mascarenhas A. Appl. Phys. Lett. 68:1996;2852.
8. T. Henderson, W.L. Chen, M. Sanna, Future Fab Int., (1997) 229.