The structure of electronic states in amorphous silicon

Journal of Molecular Graphics and Modelling

Volumn 17, Issue 5-6, 1999, Pages

  Drabold, David A ^a   Stephan, Uwe ^b   Dong, Jianjun ^c   Nakhmanson, Serge M ^a  

^a OHIO UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Amorphous silicon; Anderson transition; Electronic states; Fermi level; Thermal effects; Wannier functions

Indexed keywords

LATTICE VIBRATIONS; MOLECULAR STRUCTURE; SILICON; BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; FUNCTIONS; THERMAL EFFECTS;

ATOMIC POSITIONS; THERMAL MODULATION; ANDERSON TRANSITION; WANNIER FUNCTIONS;

MOLECULAR GRAPHICS; AMORPHOUS SILICON;

SILICON;

ARTICLE; CALCULATION; CHEMICAL STRUCTURE; ENERGY; FORCE; MOLECULAR DYNAMICS; PRIORITY JOURNAL; VIBRATION;

EID: 0033281064     PISSN: 10933263     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1093-3263(99)00036-4     Document Type: Article

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