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Volumn , Issue , 1999, Pages 23-24
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Suppression of anomalous leakage current in tunnel oxides by fluorine implantation to realize highly reliable flash memory
a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRONS;
FLUORINE;
GATES (TRANSISTOR);
INTERFACES (MATERIALS);
ION IMPLANTATION;
LEAKAGE CURRENTS;
MOS CAPACITORS;
OXIDES;
SILICONES;
THRESHOLD VOLTAGE;
CHARGE RETENTION CHARACTERISTICS;
FLASH MEMORY;
TUNNEL OXIDES;
VOLTAGE STRESS;
DATA STORAGE EQUIPMENT;
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EID: 0033281011
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (6)
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References (2)
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