Novel Simple Shallow Trench Isolation (SSTI) technology using high selective CeO2 slurry and liner SiN as a CMP stopper

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 159-160

  Park, T ^a   Kim, J Y ^a   Park, K W ^a   Lee, H S ^a   Shin, H B ^a   Kim, Y H ^a   Park, M H ^a   Kang, H K ^a   Lee, M Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; DENSIFICATION; ELECTRIC PROPERTIES; ETCHING; MASKS; OXIDATION; OXIDES; PHOTORESISTS; SILICON NITRIDE; SLURRIES;

CERIUM DIOXIDE; CHEMICAL MECHANICAL POLISHING; SIMPLE SHALLOW TRENCH ISOLATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0033280990     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)