New 1T/2C merged two-terminal gain cell with SBT encapsulated floating gate MOSFET for highly scalable FeRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 145-146

  Aoki, Masaki ^a   Mushiga, Mitsuteru ^a   Itoh, Akio ^a   Eshita, Takashi ^a   Arimoto, Yoshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; GATES (TRANSISTOR); MOS CAPACITORS; MOSFET DEVICES; TERMINALS (ELECTRIC);

FERROELECTRIC RANDOM ACCESS STORAGE; GAIN CELL;

RANDOM ACCESS STORAGE;

EID: 0033280711     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)