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Volumn , Issue , 1999, Pages 93-94
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0.1-μm CMOS with shallow and steep source/drain extensions fabricated by using Rapid Vapor-phase Doping (RVD)
a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
DIFFUSION IN SOLIDS;
ELECTRIC CURRENTS;
ELECTRIC POWER SUPPLIES TO APPARATUS;
INTEGRATED CIRCUIT MANUFACTURE;
ION IMPLANTATION;
MOSFET DEVICES;
OSCILLATORS (ELECTRONIC);
SEMICONDUCTOR DOPING;
THRESHOLD VOLTAGE;
RAPID VAPOR PHASE DOPING;
SHORT CHANNEL CHARACTERISTICS;
SOLID PHASE DIFFUSION;
STEEP SOURCE EXTENSIONS;
CMOS INTEGRATED CIRCUITS;
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EID: 0033280524
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (9)
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