Balanced electron drift oxide etcher with Xe added gas chemistry for low cost and high performance contact metallization

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 127-128

  Komeda, Hiroyuki ^a   Hirayama, Masaki ^a   Hirayama, Yusuke ^a   Ino, Kazuhide ^a   Kaihara, Ryu ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER CONCENTRATION; CRYSTAL DEFECTS; DOPING (ADDITIVES); ION IMPLANTATION; IONS; MAGNETRONS; PLASMA SOURCES; REACTIVE ION ETCHING; SILICA; TRANSMISSION ELECTRON MICROSCOPY; XENON;

BALANCED ELECTRON DRIFT; CONTACT METALLIZATION; CONTACT RESISTANCE; DOPANT DEACTIVATION; GAS CHEMISTRY; ION FLUX; JUNCTION LEAKAGE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0033280450     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)