Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 85-86

  Yang, Evans Ching Song ^a   Liu, Cheng Jye ^a   Chao, Tien Sheng ^a   Liaw, Ming Chi ^a   Hsu, Charles Ching Hsiang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC POWER SUPPLIES TO APPARATUS; INTEGRATED CIRCUIT LAYOUT; NAND CIRCUITS; REACTIVE ION ETCHING; RELIABILITY; THREE DIMENSIONAL; TRANSCONDUCTANCE;

FLASH MEMORY CELL; SOURCE CHARGING ENHANCED GATE; TUNNEL OXIDE; TUNNELING PROGRAM;

DATA STORAGE EQUIPMENT;

EID: 0033280199     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)