In-situ Multi-Step (IMS) CVD process of (Ba,Sr)TiO3 using hot wall batch type reactor for DRAM capacitor dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 101-102

  Kiyotoshi, M ^a   Yamazaki, S ^a   Eguchi, K ^a   Hieda, K ^a   Fukuzumi, Y ^a   Izuha, M ^a   Aoyama, T ^a   Niwa, S ^a   Nakamura, K ^a   Kojima, A ^a   Tomita, H ^a   Kubota, T ^a   Satoh, M ^a   Kohyama, Y ^a   Tsunashima, Y ^a   et al , ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; EPITAXIAL GROWTH; LEAKAGE CURRENTS; STRONTIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

FAST THERMAL PROCESSOR; HOT WALL REACTOR; IN-SITU MULTISTEP PROCESS;

DIELECTRIC MATERIALS;

EID: 0033279991     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)