Oxide mediated epitaxial growth of CoSi2 in a single deposition step

Materials Research Society Symposium - Proceedings

Volumn 564, Issue , 1999, Pages 117-122

  Ohmi, S ^a   Tung, R T ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; DEPOSITION; EPITAXIAL GROWTH; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

OXIDE-MEDIATED EPITAXY (OME) TECHNIQUES;

SEMICONDUCTING FILMS;

EID: 0033279650     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-564-117     Document Type: Article

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