Control of localized access to circuitry through the backside using focused ion beam technology

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2730-2733

  Antoniou, Nicholas ^a   Thompson, Mark ^a   Salen, Jesse ^a   Casey, David ^a   Goruganthu, Rama R ^b   Ring, Rose ^b   Birdsley, Jeff ^b   Gilfeather, Glen ^b  

^a Micrion Corp   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033272916     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590926     Document Type: Article

References (5)

1. R. R. Goruganthu et al., IRPS Proceedings, 37th Annual IRPS, March 1999 (unpublished), pp. 327-332.
2. J. D. Casey, Jr. et al., Microelectron. Eng. 24, 43 (1994).
3. E. S. Yang, Fundamentals of Semiconductor Devices (McGraw-Hill, New York, 1978), p. 148.
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 801-803.
5. E. S. Yang, Fundamentals of Semiconductor Devices (McGraw-Hill, New York, 1978), p. 155.