A recessed source and trench drain SOI LDMOS for improving the on-characteristics

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 4, 1999, Pages

  Kim, Sung Lyong ^a   Yang, Hoie Yoon ^a   Choi, Yearn Ik ^a  

^a Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033271897     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. B. Murari, F. Bertotti and G. A. Vignola, Smart Power ICs (New York: Springer, 1995).
2. A. Nezar and C. A. T. Salama, IEEE Trans. Electron Devices 38, 1676 (1991).
3. D.-G. Lin, S. Larry Tu, Y.-C. See and P. Tam, IEDM Tech. Dig., 963 (1995).
4. TSUPREM4 : Two-dimensional Process Simulation Program, User's Manual (TMA, 1996).
5. MEDICI : Two-dimensional Device Simulation Program, User's Manual (TMA, 1996).