Fundamental performance of state-of-the-art proximity effect correction methods

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2940-2944

  Hofmann, Uli ^a   Crandall, Richard ^b   Johnson, Leslie ^a  

^a Etec Systems Inc   (United States)

^b Perfectly Scientific Incorporated   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033269521     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590929     Document Type: Article

References (9)

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6. J. Pavkovich, J. Vac. Sci. Technol. B 4 (1986).
7. L. Veneklasen et al., "Run Time Corrections of Proximity Effects in Raster Scan Pattern Generation Systems," Proceedings of MNE in Loewen, Belgium, 1998 (in press).
8. T. Abe et al., "Fast and Highly Accurate Proximity Effect Correction for Mask Making," 3rd International Workshop on High Throughput Charged Particle Lithography, Hawaii, 1998.
9. A. Carroll, J. Appl. Phys. 52 (1981).