Fully planarized process integration and its effects on the process margin for 0.15-micron DRAM technology

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 4, 1999, Pages

  Shin, Dong Won ^a   Shin, Soo Ho ^a   Kim, Sang Beom ^a   Lee, Kyu Hyeon ^a   Chung, Tae Young ^a   Kim, Kinam ^a   Lee, Won Seok ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033269129     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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7. A. Kermani, T. Debolske, J. Crowley and T. Stultz, Nucl. Instr. Meth. Phys. Res. B21, 633 (1987).
8. Kinam Kim et al., VLSI Tech. Dig. Tech. Papers, 9 (1997).