Variations of X-ray spectrum in total reflection X-ray fluorescence (TXRF) analysis with respect to Si wafer crystal orientation for different incident angles

Chinese Journal of Physics

Volumn 37, Issue 6, 1999, Pages 623-630

  Liou, Bor Wen ^a  

^a WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033267718     PISSN: 05779073     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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2. [ 2 ] H. Schwenke, J. Knoth and U. Weisbrod, X-ray Spectrometry, 20, 277 (1991).
3. [ 3 ] N. Streckfubss et al., Fresenius J. Anal. Chem. 343, 765 (1992).
4. [ 4 ] W. Berneike et al., Spectrochimica Acta, 48B, 269 (1993).
5. [ 5 ] K. Yakushiji et al., Jpn. J. Appl. Phys. 31, 2872 (1992).