Polycrystalline silicon film deposited at 300 °C

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 4, 1999, Pages

  Yoon, Jae Hyoung ^a   Lim, Sang Hyung ^a   Moon, Byeong Yeon ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033262566     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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